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HIVE INF
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RCHIVE INFORMATION
2
RF Device Data
Freescale Semiconductor
MRF282SR1 MRF282ZR1
Table 3. Electrical Characteristics
(TC
=25°C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
On Characteristics
Gate Threshold Voltage
(VDS
=10Vdc,ID
=50μAdc)
VGS(th)
2.0
3.0
4.0
Vdc
Drain--Source On--Voltage
(VGS
=10Vdc,ID
=0.5Adc)
VDS(on)
?
0.4
0.6
Vdc
Gate Quiescent Voltage
(VDS
=26Vdc,ID
=75mAdc)
VGS(q)
3.0
4.0
5.0
Vdc
Dynamic Characteristics
Input Capacitance
(VDS
=26Vdc,VGS
=0,f=1.0MHz)
Ciss
?
15
?
pF
Output Capacitance
(VDS
=26Vdc,VGS
=0,f=1.0MHz)
Coss
?
8.0
?
pF
Reverse Transfer Capacitance
(VDS
=26Vdc,VGS
=0,f=1.0MHz)
Crss
?
0.45
?
pF
Functional Tests
(In Freescale Test Fixture)
Common--Source Power Gain
(VDD
=26Vdc,Pout
= 10 W PEP, IDQ
=75mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
Gps
10.5
11.5
?
dB
Drain Efficiency
(VDD
=26Vdc,Pout
= 10 W PEP, IDQ
=75mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
η
28
?
?
%
Intermodulation Distortion
(VDD
=26Vdc,Pout
= 10 W PEP, IDQ
=75mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
IMD
?
-- 3 1
-- 2 8
dBc
Input Return Loss
(VDD
=26Vdc,Pout
= 10 W PEP, IDQ
=75mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
IRL
?
-- 1 4
-- 9
dB
Common--Source Power Gain
(VDD
=26Vdc,Pout
= 10 W PEP, IDQ
=75mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
Gps
10.5
11.5
?
dB
Drain Efficiency
(VDD
=26Vdc,Pout
= 10 W PEP, IDQ
=75mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
η
28
?
?
%
Intermodulation Distortion
(VDD
=26Vdc,Pout
= 10 W PEP, IDQ
=75mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
IMD
?
-- 3 1
-- 2 8
dBc
Input Return Loss
(VDD
=26Vdc,Pout
= 10 W PEP, IDQ
=75mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
IRL
?
-- 1 4
-- 9
dB
Common--Source Power Gain
(VDD
=26Vdc,Pout
=10WCW,IDQ
= 75 mA, f = 2000.0 MHz)
Gps
9.5
11.5
?
dB
Drain Efficiency
(VDD
=26Vdc,Pout
=10WCW,IDQ
= 75 mA, f = 2000.0 MHz)
η
35
40
?
%
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